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| smd type ic www.kexin.com.cn 1 smd type transistors 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 npn general purpose transistors BCF81 features low current (max. 100 ma). low voltage (max. 45 v). absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 50 v collector-emitter voltage v ceo 45 v emitter-base voltage v ebo 5v collector current i c 100 ma peak collector current i cm 200 ma peak base current i bm 100 ma total power dissipation * p tot 250 mw storage temperature t stg -65to+150 junction temperature t j 150 operating ambient temperature r amb -65to+150 thermal resistance from junction to ambient * r th j-a 500 k/w * transistor mounted on an fr4 printed-circuit board.
www.kexin.com.cn 2 smd type ic smd type transistors electrical characteristics ta = 25 parameter symbol testconditons min typ max unit i cbo i e =0;v cb = 20 v 100 na i cbo i e =0;v cb =20v;t j = 100 10 a emitter cutoff current i ebo i c =0;v eb = 5 v 100 na dc current gain h fe i c =2ma;v ce = 5 v 420 800 i c =10ma;i b = 0.5 ma 120 250 mv i c =50ma;i b = 2.5 ma 210 mv i c =10ma;i b = 0.5 ma 750 mv i c =50ma;i b = 2.5 ma 850 mv base to emitter voltage v be i c =2ma;v ce = 5 v 550 700 mv collector capacitance c c i e =ie=0;v cb =10v;f=1mhz 2.5 pf transition frequency f t i c =10ma;v ce = 5 v; f = 100 mhz 100 mhz noise figure nf i c = 200 a; v ce =5v;r s =2k; f= 1 khz; b = 200 hz 1.2 4 db collector cutoff current base to emitter saturation voltage collector-emitter saturation voltage v be(sat) v ce(sat) BCF81 marking marking k9p |
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